| PART |
Description |
Maker |
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| 3SK199 E001702 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| BF990A |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 3N209 3N210 |
N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
